1. Core Type and Structure
- Device Type: Asymmetrical Integrated Gate-Commutated Thyristor (AS-IGCT)
- Structural Features:
- Asymmetrical structure: Optimized current sharing and voltage distribution
- Integrated package: Built-in gate drive circuit, anti-parallel diode, and low-inductance connection
- Double-sided direct water-cooled: High heat dissipation efficiency and extremely low thermal resistance
2. Key Electrical Parameters
- Peak reverse blocking voltage (): 4500 V
- Maximum controllable turn-off current (): 4000 A
- Average on-state current (): 4500 A
- On-state voltage drop (): 1.4 V ()
- Slope resistance (): 0.325 mΩ
- Switching Performance:
- Turn-on delay: ≤ 3.5 μs
- Turn-off delay: ≤ 7 μs
- Rise time: ≤ 1 μs
- Switching frequency: Up to 2 kHz
- Operating temperature: -40°C to +150°C
3. Physical Specifications
- Dimensions: 439 mm × 173 mm × 41 mm
- Weight: 2.9 kg
- Package: Standard industrial module package
4. Main Features and Advantages
High Reliability
- Reliable turn-off without snubber circuits
- High electromagnetic interference immunity
- Long service life, suitable for harsh industrial environments
High Efficiency
- Low conduction loss and low switching loss
- Excellent heat dissipation performance with double-sided water cooling
Easy Integration
- Compact modular design for easy installation and maintenance
- Simple control interface with status feedback
- Supports AC/DC power supply
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