Core Specifications
| Category | Details |
|---|---|
| Electrical Ratings | Repetitive peak off-state voltage: 4500 V
Rated RMS current: 4000 A Peak turn-off current: 6000 A Switching loss: <2.5 kW per device Turn-off time: <3 μs Max switching frequency: 500 Hz |
| Gate Drive | Matched to GVC750BE101 unit; fiber-optic isolated drive |
| Thermal & Cooling | Deionized water cooling (ΔT = 35°C)
Operating junction temperature: 0–125°C |
| Insulation & Rating | 12 kV AC insulation between main terminals
Enclosure rating: IP4X |
| Physical Specs | Power stack assembly: ~450 × 300 × 150 mm
Module body: ~439 × 173 × 41 mm Weight: ≈2.9 kg |
| Environmental | Operating temperature: -40°C to 85°C
Storage temperature: -55°C to 125°C Relative humidity: 5%–95% (non-condensing) |
| Certifications | Complies with IEC 61131-3; CE and CSA certified |
Key Technical Features
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Asymmetric Structure & Press-Fit PackagingMerges the low on-state loss of a GTO with the stable, fast turn-off of a transistor. The press-fit package enhances reliability and thermal dissipation, supporting series/parallel configurations for multi-level converter topologies.
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High IntegrationIntegrates an anti-parallel diode and gate-drive circuitry within the module, eliminating the need for external snubber circuits. This simplifies system design, reduces BOM costs, and improves overall reliability.
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Low Loss & High EfficiencyDelivers ~50% lower dynamic loss than conventional GTOs, significantly boosting system energy efficiency and reducing thermal loading.
- Superior Reliability
Narrow turn-off time distribution (<0.2 μs) enables excellent dynamic voltage sharing in series. Low-inductance connections minimize EMI risks, ensuring long-term stability in continuous-duty applications.
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