I. Core Overview
Type: 5SHX2645L0004 (Alternative Part No.: 3BHL000389P0104)
Category: Asymmetrical IGCT Module (with anti-parallel freewheeling diode)
Technology: Integrated Gate-Commutated Thyristor (IGCT), combining the high-speed switching of IGBT and the high voltage withstand capability of GTO
Package: Press-pack module with integrated drive, protection and heat dissipation structure
Origin: Sweden (ABB)
II. Key Electrical Parameters (Official Typical Values)
- Rated blocking voltage (VDRM/VRRM): 4500 V
- Rated turn-off current (ITGM): 1850 A
- Operating frequency: Up to 2 kHz (optimized for medium frequency)
- Turn-on / Turn-off time: ≤ 1.5 μs (fast switching)
- Operating temperature: -40°C ～ +150°C
- Cooling method: Water cooling
- Power rating: Approx. 15 MW (typical application)
III. Technical Features
- Low Losses: Buffer layer structure with thinner silicon wafer, significantly reduced on-state and switching losses
- Hard-driven Turn-off: Integrated gate circuit realizes “gate commutation”, supporting snubberless turn-off
- High Reliability:
- Built-in overcurrent, overvoltage, over-temperature and undervoltage protection
- Press-pack package, high vibration resistance and excellent heat dissipation
- High electromagnetic immunity (EMI)
- Modular Design: Easy parallel expansion, suitable for various power ratings
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